AUIRFS4410ZTRL Infineon / IR

Description: AUTOMOTIVE HEXFET N CHANNEL, Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk.