AUIRFS8407 Infineon Technologies
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 40V 250A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube
| Кількість | Ціна без ПДВ |
|---|---|
| 134+ | 105.60 грн |
| 145+ | 98.10 грн |
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Технічний опис AUIRFS8407 Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції AUIRFS8407
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AUIRFS8407 | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
AUIRFS8407 | Infineon Technologies |
MOSFETs Auto 40V N-Ch FET 1.4mOhm 195A |
товару немає в наявності |
В кошику од. на суму грн. |
| AUIRFS8407 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 40V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| AUIRFS8407 |
|
Виробник: Infineon Technologies
MOSFETs Auto 40V N-Ch FET 1.4mOhm 195A
MOSFETs Auto 40V N-Ch FET 1.4mOhm 195A
товару немає в наявності
В кошику
од. на суму грн.