AUIRGP35B60PD-E

AUIRGP35B60PD-E Infineon Technologies


infineon-auirgp35b60pd-e-ds-v01_01-en.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 60A 308000mW Automotive 3-Pin(3+Tab) TO-247AD Tube
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Технічний опис AUIRGP35B60PD-E Infineon Technologies

Description: IGBT 600V 60A 308W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A, Supplier Device Package: TO-247AD, IGBT Type: NPT, Td (on/off) @ 25°C: 26ns/110ns, Switching Energy: 220µJ (on), 215µJ (off), Test Condition: 390V, 22A, 3.3Ohm, 15V, Gate Charge: 55 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 308 W.

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AUIRGP35B60PD-E AUIRGP35B60PD-E Виробник : Infineon Technologies AUIRGP35B60PD-E.pdf Description: IGBT 600V 60A 308W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/110ns
Switching Energy: 220µJ (on), 215µJ (off)
Test Condition: 390V, 22A, 3.3Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 308 W
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AUIRGP35B60PD-E AUIRGP35B60PD-E Виробник : Infineon / IR Infineon-AUIRGP35B60PD-E-DS-v01_01-EN-1225911.pdf IGBT Transistors AUTO 600V WARP2 150KHZ 84mOhm
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