AUIRL3705ZSTRL Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 380.70 грн |
| 10+ | 245.86 грн |
| 100+ | 159.64 грн |
| 500+ | 133.62 грн |
| 800+ | 123.07 грн |
| 2400+ | 116.04 грн |
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Технічний опис AUIRL3705ZSTRL Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AUIRL3705ZSTRL за ціною від 5083.42 грн до 5083.42 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AUIRL3705ZSTRL | International Rectifier |
 Description: MOSFET N-CH 55V 75A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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| AUIRL3705ZSTRL |
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Виробник: International Rectifier
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 5083.42 грн |