AUIRL7732S2TR Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
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Технічний опис AUIRL7732S2TR Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SC, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V, Power Dissipation (Max): 2.2W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 50µA, Supplier Device Package: DIRECTFET™ SC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V.
Інші пропозиції AUIRL7732S2TR за ціною від 51.71 грн до 126.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRL7732S2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 14A DIRECTFET SCInput Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ SC Vgs(th) (Max) @ Id: 2.5V @ 50µA Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric SC Packaging: Cut Tape (CT) |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
|
| AUIRL7732S2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ SC
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SC
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ SC
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SC
Packaging: Cut Tape (CT)
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.98 грн |
| 10+ | 101.44 грн |
| 100+ | 80.79 грн |
| 500+ | 64.15 грн |
| 1000+ | 54.43 грн |
| 2000+ | 51.71 грн |


