AUIRLR014NTRL International Rectifier
Виробник: International RectifierDescription: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 91+ | 60.93 грн |
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Технічний опис AUIRLR014NTRL International Rectifier
Description: MOSFET N-CH 55V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції AUIRLR014NTRL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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AUIRLR014NTRL | Виробник : Infineon / IR |
MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms |
на замовлення 2778 шт: термін постачання 21-30 дні (днів) |
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AUIRLR014NTRL | Виробник : Infineon Technologies |
Description: MOSFET N-CH 55V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |