AUIRLR3915

AUIRLR3915 Infineon Technologies


AUIRLR3915.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
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Технічний опис AUIRLR3915 Infineon Technologies

Description: MOSFET N-CH 55V 30A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D-PAK (TO-252AA), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V.

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AUIRLR3915 Виробник : Infineon / IR auirlr3915-1297934.pdf MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET
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