AUIRLS3114Z

AUIRLS3114Z Infineon Technologies


AUIRLS3114Z.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 56A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3617 pF @ 25 V
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Технічний опис AUIRLS3114Z Infineon Technologies

Description: MOSFET N-CH 40V 56A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 56A, 10V, Power Dissipation (Max): 143W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3617 pF @ 25 V.

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AUIRLS3114Z AUIRLS3114Z Виробник : Infineon Technologies auirls3114z-1297935.pdf MOSFET 40V 42A 4.9 mOhm Auto Lgc Lvl MOSFET
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