Технічний опис AUIRLS8409-7TRL Infineon / IR
Description: MOSFET N-CH 40V 240A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PG-TO263-7, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 16488 pF @ 25 V.
Інші пропозиції AUIRLS8409-7TRL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AUIRLS8409-7TRL | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 40V 500A Automotive 7-Pin(6+Tab) D2PAK T/R |
товару немає в наявності |
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AUIRLS8409-7TRL | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-7 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16488 pF @ 25 V |
товару немає в наявності |