BAL99/DG/B2215 NXP USA Inc.
Виробник: NXP USA Inc.
Description: DIODE STANDARD 80V 250MA SOT233
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
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Технічний опис BAL99/DG/B2215 NXP USA Inc.
Description: DIODE STANDARD 80V 250MA SOT233, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 1 µA @ 70 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SOT-23-3, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz.