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Технічний опис BAP51LX,315 NXP Semiconductors
Description: RF DIODE PIN 60V 140MW DFN1006D2, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Diode Type: PIN - Single, Operating Temperature: -65°C ~ 150°C (TJ), Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz, Resistance @ If, F: 1.5Ohm @ 100mA, 100MHz, Voltage - Peak Reverse (Max): 60V, Supplier Device Package: DFN1006D-2, Current - Max: 100 mA, Power Dissipation (Max): 140 mW.
Інші пропозиції BAP51LX,315
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BAP51LX,315 | NXP USA Inc. |
 Description: RF DIODE PIN 60V 140MW DFN1006D2Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Diode Type: PIN - Single Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1.5Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 60V Supplier Device Package: DFN1006D-2 Current - Max: 100 mA Power Dissipation (Max): 140 mW |
товару немає в наявності |
В кошику од. на суму грн. |
| BAP51LX,315 |
|
Виробник: NXP USA Inc.
Description: RF DIODE PIN 60V 140MW DFN1006D2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1.5Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: DFN1006D-2
Current - Max: 100 mA
Power Dissipation (Max): 140 mW
Description: RF DIODE PIN 60V 140MW DFN1006D2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1.5Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: DFN1006D-2
Current - Max: 100 mA
Power Dissipation (Max): 140 mW
товару немає в наявності
В кошику
од. на суму грн.