Технічний опис BAR9002LSE6327XTSA1 Infineon Technologies
Description: RF DIODE PIN 80V 150MW TSSLP-2, Packaging: Tape & Reel (TR), Package / Case: 0201 (0603 Metric), Diode Type: PIN - Single, Operating Temperature: 150°C (TJ), Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz, Resistance @ If, F: 800mOhm @ 10mA, 100MHz, Voltage - Peak Reverse (Max): 80V, Supplier Device Package: PG-TSSLP-2-1, Part Status: Obsolete, Current - Max: 100 mA, Power Dissipation (Max): 150 mW.
Інші пропозиції BAR9002LSE6327XTSA1
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BAR9002LSE6327XTSA1 | Виробник : Infineon Technologies |
 Description: RF DIODE PIN 80V 150MW TSSLP-2Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz Resistance @ If, F: 800mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 80V Supplier Device Package: PG-TSSLP-2-1 Part Status: Obsolete Current - Max: 100 mA Power Dissipation (Max): 150 mW |
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BAR9002LSE6327XTSA1 | Виробник : Infineon Technologies |
Description: RF DIODE PIN 80V 150MW TSSLP-2 Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz Resistance @ If, F: 800mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 80V Supplier Device Package: PG-TSSLP-2-1 Part Status: Obsolete Current - Max: 100 mA Power Dissipation (Max): 150 mW |
товар відсутній |