BAS 116 E6433 Infineon Technologies

Description: DIODE GEN PURP 80V 250MA SOT23-3, Supplier Device Package: SOT-23-3, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max).