Технічний опис BAS16LTH-HG3-08 Vishay
Description: DIODE STD 100V 250MA DFN10062A, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: DFN1006-2A, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Qualification: AEC-Q101.
Інші пропозиції BAS16LTH-HG3-08 за ціною від 2.33 грн до 14.88 грн
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BAS16LTH-HG3-08 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE STD 100V 250MA DFN10062APackaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DFN1006-2A Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 19836 шт: термін постачання 21-31 дні (днів) |
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BAS16LTH-HG3-08 | Vishay Semiconductors |
Small Signal Switching Diodes SWITCHING DIODE GENPURP DFN1006-2A |
на замовлення 13680 шт: термін постачання 21-30 дні (днів) |
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| BAS16LTH-HG3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STD 100V 250MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 19836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.27 грн |
| 34+ | 9.01 грн |
| 100+ | 6.47 грн |
| 500+ | 4.46 грн |
| 1000+ | 3.56 грн |
| 2000+ | 3.49 грн |
| 5000+ | 2.97 грн |
| BAS16LTH-HG3-08 |
|
Виробник: Vishay Semiconductors
Small Signal Switching Diodes SWITCHING DIODE GENPURP DFN1006-2A
Small Signal Switching Diodes SWITCHING DIODE GENPURP DFN1006-2A
на замовлення 13680 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.88 грн |
| 34+ | 9.73 грн |
| 100+ | 6.13 грн |
| 500+ | 4.51 грн |
| 1000+ | 3.52 грн |
| 5000+ | 3.10 грн |
| 10000+ | 2.33 грн |