Технічний опис BAS216,115 NXP
Description: DIODE STANDARD 75V 250MA SOD110, Current - Reverse Leakage @ Vr: 1 µA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 75 V, Part Status: Obsolete, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SOD-110, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-110, Packaging: Tape & Reel (TR).
Інші пропозиції BAS216,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BAS216,115 | Виробник : NXP USA Inc. |
 Description: DIODE STANDARD 75V 250MA SOD110Current - Reverse Leakage @ Vr: 1 µA @ 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-110 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-110 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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BAS216,115 | Виробник : NXP USA Inc. |
Description: DIODE STANDARD 75V 250MA SOD110 Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-110 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-110 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
товару немає в наявності |