Технічний опис BAS216,115 NXP Semiconductors
Description: DIODE GEN PURP 75V 250MA SOD110, Packaging: Tape & Reel (TR), Package / Case: SOD-110, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: SOD-110, Operating Temperature - Junction: 150°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 75 V.
Інші пропозиції BAS216,115
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BAS216,115 | Виробник : NXP USA Inc. |
 Description: DIODE GEN PURP 75V 250MA SOD110Packaging: Tape & Reel (TR) Package / Case: SOD-110 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-110 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
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BAS216,115 | Виробник : NXP USA Inc. |
Description: DIODE GEN PURP 75V 250MA SOD110 Packaging: Cut Tape (CT) Package / Case: SOD-110 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-110 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
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