BAS28E6359HTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE ARR GP 80V 100MA SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT143-4
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 75
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BAS28E6359HTMA1 Infineon Technologies
Description: DIODE ARR GP 80V 100MA SOT143-4, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 100mA (DC), Supplier Device Package: PG-SOT143-4, Operating Temperature - Junction: 150°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 75 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100, Voltage Coupled to Current - Reverse Leakage @ Vr: 75, Grade: Automotive, Qualification: AEC-Q101.