BAS70-07WE6327

BAS70-07WE6327 Infineon Technologies


INFNS11040-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT343-4-1
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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Технічний опис BAS70-07WE6327 Infineon Technologies

Description: SCHOTTKY DIODE, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA, Voltage - DC Reverse (Vr) (Max): 70 V, Operating Temperature - Junction: 150°C, Supplier Device Package: PG-SOT343-4-1, Current - Average Rectified (Io) (per Diode): 70mA (DC), Diode Configuration: 2 Independent, Technology: Schottky, Reverse Recovery Time (trr): 100 ps, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SC-82A, SOT-343, Packaging: Bulk.