BAV170QAZ Nexperia
Виробник: Nexperia
Small Signal Switching Diodes The factory is currently not accepting orders for this product.
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.97 грн |
| 23+ | 14.21 грн |
| 100+ | 7.52 грн |
| 500+ | 5.38 грн |
| 1000+ | 4.76 грн |
| 2500+ | 4.14 грн |
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Технічний опис BAV170QAZ Nexperia
Description: DIODE ARR GP 75V 180MA DFN1010D3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 3 µs, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 180mA (DC), Supplier Device Package: DFN1010D-3, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Qualification: AEC-Q101.
Інші пропозиції BAV170QAZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BAV170QAZ | Nexperia USA Inc. |
Description: DIODE ARR GP 75V 180MA DFN1010D3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 180mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
BAV170QAZ | Nexperia USA Inc. |
Description: DIODE ARR GP 75V 180MA DFN1010D3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 180mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| BAV170QAZ | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 320mA; 3us; DFN1010D-3; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 320mA Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: DFN1010D-3 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Application: automotive industry Power dissipation: 0.54W |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. |
| BAV170QAZ |
|
Виробник: Nexperia USA Inc.
Description: DIODE ARR GP 75V 180MA DFN1010D3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 180mA (DC)
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Description: DIODE ARR GP 75V 180MA DFN1010D3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 180mA (DC)
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BAV170QAZ |
|
Виробник: Nexperia USA Inc.
Description: DIODE ARR GP 75V 180MA DFN1010D3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 180mA (DC)
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Description: DIODE ARR GP 75V 180MA DFN1010D3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 180mA (DC)
Supplier Device Package: DFN1010D-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BAV170QAZ |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 320mA; 3us; DFN1010D-3; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 320mA
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: DFN1010D-3
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Application: automotive industry
Power dissipation: 0.54W
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 320mA; 3us; DFN1010D-3; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 320mA
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: DFN1010D-3
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Application: automotive industry
Power dissipation: 0.54W
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.