BAV301-TR3 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 250MA MICROMELF
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: MicroMELF
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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Технічний опис BAV301-TR3 Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 250MA MICROMELF, Current - Reverse Leakage @ Vr: 100 nA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: MicroMELF, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-SMD, No Lead, Packaging: Tape & Reel (TR).
Інші пропозиції BAV301-TR3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
BAV301-TR3 | Виробник : Vishay Semiconductors |
Small Signal Switching Diodes 120 Volt 625mA |
товару немає в наявності |
