BAV302-TR3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 18+ | 18.98 грн |
| 26+ | 12.64 грн |
| 100+ | 6.95 грн |
| 500+ | 4.31 грн |
| 1000+ | 3.13 грн |
| 2500+ | 2.71 грн |
| 5000+ | 2.36 грн |
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Технічний опис BAV302-TR3 Vishay Semiconductors
Description: DIODE GP 150V 250MA MICROMELF, Current - Reverse Leakage @ Vr: 100 nA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: MicroMELF, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-SMD, No Lead, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції BAV302-TR3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BAV302-TR3 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 150V 250MA MICROMELFCurrent - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: MicroMELF Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |