BAW56QAZ 934069812147 NEXPERIA
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 310mA; 4ns; DFN1010D-3; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 310mA
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: DFN1010D-3
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Power dissipation: 0.54W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 310mA; 4ns; DFN1010D-3; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 310mA
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: DFN1010D-3
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Power dissipation: 0.54W
Kind of package: reel; tape
кількість в упаковці: 5 шт
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Технічний опис BAW56QAZ 934069812147 NEXPERIA
Category: SMD universal diodes, Description: Diode: switching; SMD; 90V; 310mA; 4ns; DFN1010D-3; Ufmax: 1.25V, Type of diode: switching, Mounting: SMD, Max. off-state voltage: 90V, Load current: 310mA, Max. load current: 0.5A, Reverse recovery time: 4ns, Semiconductor structure: common anode; double, Features of semiconductor devices: fast switching, Case: DFN1010D-3, Max. forward voltage: 1.25V, Max. forward impulse current: 4A, Leakage current: 0.5µA, Power dissipation: 0.54W, Kind of package: reel; tape, кількість в упаковці: 5 шт.
Інші пропозиції BAW56QAZ 934069812147
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BAW56QAZ 934069812147 | Виробник : NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 310mA; 4ns; DFN1010D-3; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 310mA Max. load current: 0.5A Reverse recovery time: 4ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: DFN1010D-3 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 0.5µA Power dissipation: 0.54W Kind of package: reel; tape |
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