BC107A TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 45V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 600 mW
Description: 45V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 600 mW
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Технічний опис BC107A TIN/LEAD Central Semiconductor Corp
Description: 45V 200MA 600MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 600 mW.
Інші пропозиції BC107A TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BC107A TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 6.0Vebo 200mA 600Pd |
товару немає в наявності |