BC182B-J35Z

BC182B-J35Z ON Semiconductor


3660335581002016bc182b.pdf Виробник: ON Semiconductor
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 Bulk
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Технічний опис BC182B-J35Z ON Semiconductor

Description: TRANS NPN 50V 0.1A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 350 mW.

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BC182B_J35Z BC182B_J35Z Виробник : onsemi BC182B.pdf Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
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BC182B_J35Z BC182B_J35Z Виробник : onsemi / Fairchild bc182b.pdf Bipolar Transistors - BJT NPN 50V 100mA HFE/5
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