BC212A TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 50V 200MA 300MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Description: 50V 200MA 300MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
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Технічний опис BC212A TIN/LEAD Central Semiconductor Corp
Description: 50V 200MA 300MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 5V, Frequency - Transition: 200MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW.
Інші пропозиції BC212A TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BC212A TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT PNP Trans 50Vcbo 300mA Ic 625mW |
товару немає в наявності |