Технічний опис BC212BG ON
Description: TRANS PNP 50V 0.1A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V, Frequency - Transition: 280MHz, Supplier Device Package: TO-92 (TO-226), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 350 mW.
Інші пропозиції BC212BG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BC212BG | Виробник : ON Semiconductor |
 Trans GP BJT PNP 50V 0.1A 350mW 3-Pin TO-92 Box |
товару немає в наявності |
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,TO-226_straightlead.jpg "BC212BG") |
BC212BG | Виробник : onsemi |
Description: TRANS PNP 50V 0.1A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW |
товару немає в наявності |