BC308ABU onsemi
Виробник: onsemi
Description: TRANS PNP 25V 0.1A TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
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Технічний опис BC308ABU onsemi
Description: TRANS PNP 25V 0.1A TO-92-3, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: TO-92-3, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole.
Інші пропозиції BC308ABU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BC308ABU | Виробник : Diodes Incorporated |
Bipolar Transistors - BJT |
товару немає в наявності |
||
 |
BC308ABU | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT PNP -25V -100mA HFE/220 |
товару немає в наявності |