Технічний опис BC337-16 A1G Taiwan Semiconductor
Description: TRANS NPN 45V 0.8A TO92, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 625 mW.
Інші пропозиції BC337-16 A1G
| Фото | Назва | Виробник | Інформація |
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BC337-16 A1G | Виробник : Taiwan Semiconductor Corporation |
 Description: TRANS NPN 45V 0.8A TO92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
товару немає в наявності |
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BC337-16 A1G | Виробник : Taiwan Semiconductor |
Bipolar Transistors - BJT 50V, 0.8A, NPN Bipolar Transistor |
товару немає в наявності |