BC558BZL1G

BC558BZL1G ON Semiconductor


bc556b-d.pdf Виробник: ON Semiconductor
Trans GP BJT PNP 30V 0.1A 625mW 3-Pin TO-92 Ammo
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Технічний опис BC558BZL1G ON Semiconductor

Description: TRANS PNP 30V 0.1A TO92, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V, Frequency - Transition: 360MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 625 mW.

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BC558BZL1G BC558BZL1G Виробник : onsemi bc556b-d.pdf Description: TRANS PNP 30V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 360MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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BC558BZL1G Виробник : Infineon Technologies bc556b-d.pdf Bipolar Transistors - BJT
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BC558BZL1G BC558BZL1G Виробник : onsemi BC556B_D-2310094.pdf Bipolar Transistors - BJT SS T092 GP XSTR PNP 30V
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