Технічний опис BC55PAS-QX Nexperia
Description: BC55PAS-Q/SOT1061/HUSON3, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: DFN2020D-3, Grade: Automotive, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 420 mW, Qualification: AEC-Q101.
Інші пропозиції BC55PAS-QX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BC55PAS-QX | Виробник : Nexperia USA Inc. |
 Description: BC55PAS-Q/SOT1061/HUSON3Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020D-3 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Qualification: AEC-Q101 |
товару немає в наявності |
|
 |
BC55PAS-QX | Виробник : Nexperia |
Bipolar Transistors - BJT BC55PAS-Q/SOT1061/HUSON3 |
товару немає в наявності |