BC56-16PA-7 DIODES INC.
Виробник: DIODES INC.
Description: DIODES INC. - BC56-16PA-7 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 1 A, 520 mW, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 25hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 520mW
Bauform - Transistor: U-DFN2020
Dauerkollektorstrom: 1A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 125MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Відгуки про товар
Написати відгук
Технічний опис BC56-16PA-7 DIODES INC.
Description: DIODES INC. - BC56-16PA-7 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 1 A, 520 mW, U-DFN2020, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, rohsCompliant: YES, DC-Stromverstärkung (hFE), min.: 25hFE, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, euEccn: NLR, Verlustleistung: 520mW, Bauform - Transistor: U-DFN2020, Dauerkollektorstrom: 1A, Anzahl der Pins: 3Pin(s), Produktpalette: -, Kollektor-Emitter-Spannung, max.: 80V, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: NPN, Übergangsfrequenz: 125MHz, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції BC56-16PA-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
BC56-16PA-7 | DIODES INC. |
Description: DIODES INC. - BC56-16PA-7 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 1 A, 520 mW, U-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 25hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 520mW Bauform - Transistor: U-DFN2020 Dauerkollektorstrom: 1A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 80V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 125MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BC56-16PA-7 | Diodes Zetex |
Trans GP BJT NPN 80V 1A 520mW 3-Pin UDFN EP T/R |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BC56-16PA-7 | Diodes Incorporated |
Description: TRANS NPN 80V 1A U-DFN2020-3 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: U-DFN2020-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 520 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
BC56-16PA-7 | Diodes Incorporated |
Description: TRANS NPN 80V 1A U-DFN2020-3 Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: U-DFN2020-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 520 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BC56-16PA-7 | Diodes Incorporated |
Bipolar Transistors - BJT NPN 80V Med PWR Trans 1A Ic 2A Icm |
товару немає в наявності |
В кошику од. на суму грн. |
| BC56-16PA-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 520mW; U-DFN2020-3 Mounting: SMD Collector current: 1A Power dissipation: 0.52W Pulsed collector current: 2A Current gain: 25...250 Collector-emitter voltage: 80V Quantity in set/package: 3000pcs. Frequency: 125MHz Polarisation: bipolar Kind of package: reel; tape Case: U-DFN2020-3 Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. |
| BC56-16PA-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - BC56-16PA-7 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 1 A, 520 mW, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 25hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 520mW
Bauform - Transistor: U-DFN2020
Dauerkollektorstrom: 1A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Übergangsfrequenz: 125MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - BC56-16PA-7 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 1 A, 520 mW, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 25hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 520mW
Bauform - Transistor: U-DFN2020
Dauerkollektorstrom: 1A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: NPN
Übergangsfrequenz: 125MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
товару немає в наявності
В кошику
од. на суму грн.
| BC56-16PA-7 |
|
Виробник: Diodes Zetex
Trans GP BJT NPN 80V 1A 520mW 3-Pin UDFN EP T/R
Trans GP BJT NPN 80V 1A 520mW 3-Pin UDFN EP T/R
товару немає в наявності
В кошику
од. на суму грн.
| BC56-16PA-7 |
|
Виробник: Diodes Incorporated
Description: TRANS NPN 80V 1A U-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A U-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BC56-16PA-7 |
|
Виробник: Diodes Incorporated
Description: TRANS NPN 80V 1A U-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A U-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 520 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BC56-16PA-7 |
|
Виробник: Diodes Incorporated
Bipolar Transistors - BJT NPN 80V Med PWR Trans 1A Ic 2A Icm
Bipolar Transistors - BJT NPN 80V Med PWR Trans 1A Ic 2A Icm
товару немає в наявності
В кошику
од. на суму грн.
| BC56-16PA-7 |
|
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 520mW; U-DFN2020-3
Mounting: SMD
Collector current: 1A
Power dissipation: 0.52W
Pulsed collector current: 2A
Current gain: 25...250
Collector-emitter voltage: 80V
Quantity in set/package: 3000pcs.
Frequency: 125MHz
Polarisation: bipolar
Kind of package: reel; tape
Case: U-DFN2020-3
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 520mW; U-DFN2020-3
Mounting: SMD
Collector current: 1A
Power dissipation: 0.52W
Pulsed collector current: 2A
Current gain: 25...250
Collector-emitter voltage: 80V
Quantity in set/package: 3000pcs.
Frequency: 125MHz
Polarisation: bipolar
Kind of package: reel; tape
Case: U-DFN2020-3
Type of transistor: NPN
товару немає в наявності
В кошику
од. на суму грн.