Технічний опис BC618,112 NXP Semiconductors
Description: TRANS NPN DARL 55V 0.5A TO-92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.1V @ 200µA, 200mA, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V, Frequency - Transition: 155MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 55 V, Power - Max: 625 mW.
Інші пропозиції BC618,112
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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BC618,112 | Виробник : NXP USA Inc. |
 Description: TRANS NPN DARL 55V 0.5A TO-92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.1V @ 200µA, 200mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V Frequency - Transition: 155MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 55 V Power - Max: 625 mW |
товар відсутній |