BC635,116

BC635,116 NXP Semiconductors


bc635_bcp54_bcx54_7.pdf Виробник: NXP Semiconductors
Trans GP BJT NPN 45V 1A 830mW 3-Pin TO-92 T/R
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Технічний опис BC635,116 NXP Semiconductors

Description: TRANS NPN 45V 1A TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 830 mW.

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BC635,116 BC635,116 Виробник : NXP USA Inc. BC635,BCP54,BCX54.pdf Description: TRANS NPN 45V 1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 830 mW
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BC635,116 Виробник : Infineon Technologies BC635,BCP54,BCX54.pdf Bipolar Transistors - BJT
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