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BC817-40E6433 ROCHESTER ELECTRONICS

INFNS11757-1.pdf?t.download=true&u=5oefqw Виробник: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BC817-40E6433 - BC817 - GENERAL PURPOSE TRANSISTOR
tariffCode: 85412100
euEccn: TBC
hazardous: false
rohsCompliant: YES
productTraceability: No
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Технічний опис BC817-40E6433 ROCHESTER ELECTRONICS

Description: BIPOLAR GEN PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Frequency - Transition: 170MHz, Supplier Device Package: PG-SOT23, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 500 mW.

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BC817-40E6433 BC817-40E6433 Виробник : Infineon Technologies INFNS11757-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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BC 817-40 E6433 BC 817-40 E6433 Виробник : Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BC 817-40 E6433 BC 817-40 E6433 Виробник : Infineon Technologies bc817Kseries_bc818Kseries-85224.pdf Bipolar Transistors - BJT AF TRANSISTORS
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