Технічний опис BC846BQB-QZ Nexperia
Description: TRANS NPN 65V 0.1A DFN1110D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 340 mW, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BC846BQB-QZ за ціною від 3.60 грн до 16.31 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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BC846BQB-QZ | Nexperia USA Inc. |
 Description: TRANS NPN 65V 0.1A DFN1110D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 340 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1226 шт: термін постачання 21-31 дні (днів) |
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BC846BQB-QZ | Nexperia |
Bipolar Transistors - BJT BC846BQB-Q/SOT8015/DFN1110D-3 |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| BC846BQB-QZ |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 65V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.31 грн |
| 32+ | 9.65 грн |
| 100+ | 5.96 грн |
| 500+ | 4.09 грн |
| 1000+ | 3.60 грн |
| BC846BQB-QZ |
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Виробник: Nexperia
Bipolar Transistors - BJT BC846BQB-Q/SOT8015/DFN1110D-3
Bipolar Transistors - BJT BC846BQB-Q/SOT8015/DFN1110D-3
на замовлення 254 шт:
термін постачання 21-30 дні (днів)