BC846SE6327 Infineon Technologies

Description: BIPOLAR GEN PURPOSE TRANSISTOR, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk, Part Status: Active, Supplier Device Package: PG-SOT363-6-1, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V.