BC848W/DG/B2115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Qualification: AEC-Q101
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SC-70
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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Технічний опис BC848W/DG/B2115 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Qualification: AEC-Q101, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: SC-70, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.