BC856B/DG/B2235 NXP USA Inc.
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Відгуки про товар
Написати відгук
Технічний опис BC856B/DG/B2235 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 65 V, Current - Collector (Ic) (Max): 100 mA, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Part Status: Active, Packaging: Bulk, Supplier Device Package: SOT-23-3 (TO-236), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3.