BC856BMBYL Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 0.1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 15+ | 21.75 грн |
| 24+ | 12.49 грн |
| 100+ | 7.74 грн |
| 500+ | 5.31 грн |
| 1000+ | 4.67 грн |
| 2000+ | 4.14 грн |
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Технічний опис BC856BMBYL Nexperia USA Inc.
Description: TRANS PNP 60V 0.1A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1006B-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 250 mW, Qualification: AEC-Q101.
Інші пропозиції BC856BMBYL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
BC856BMBYL | Nexperia USA Inc. |
Description: TRANS PNP 60V 0.1A DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1006B-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 250 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BC856BMBYL | Nexperia |
Bipolar Transistors - BJT SOT883B 65V .1A PNP BJT |
товару немає в наявності |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. |
| BC856BMBYL |
|
Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 0.1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS PNP 60V 0.1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BC856BMBYL |
|
Виробник: Nexperia
Bipolar Transistors - BJT SOT883B 65V .1A PNP BJT
Bipolar Transistors - BJT SOT883B 65V .1A PNP BJT
товару немає в наявності
Мінімальне замовлення: 16 шт
В кошику
од. на суму грн.