BC856BS/DG/B3115 NXP
Виробник: NXPDescription: NXP - BC856BS/DG/B3115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 198980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10683+ | 3.80 грн |
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Технічний опис BC856BS/DG/B3115 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP, Operating Temperature: 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BC856BS/DG/B3115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BC856BS/DG/B3115 | Виробник : NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Operating Temperature: 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |