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BC856BS/DG/B3115

BC856BS/DG/B3115 NXP USA Inc.

BC856BMB.pdf
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
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Технічний опис BC856BS/DG/B3115 NXP USA Inc.

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Part Status: Active, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 6-TSSOP, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363.