Технічний опис BC857AQBAZ Nexperia
Description: TRANS 45V 0.1A DFN1110D-3, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: DFN1110D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Cut Tape (CT).
Інші пропозиції BC857AQBAZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
BC857AQBAZ | Nexperia USA Inc. |
 Description: TRANS 45V 0.1A DFN1110D-3Qualification: AEC-Q101 Grade: Automotive Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BC857AQBAZ | Nexperia |
Bipolar Transistors - BJT SOT8015 45V .1A PNP BJT |
товару немає в наявності |
Мінімальне замовлення: 21 шт В кошику од. на суму грн. |
| BC857AQBAZ |
|
Виробник: Nexperia USA Inc.
Description: TRANS 45V 0.1A DFN1110D-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS 45V 0.1A DFN1110D-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BC857AQBAZ |
|
Виробник: Nexperia
Bipolar Transistors - BJT SOT8015 45V .1A PNP BJT
Bipolar Transistors - BJT SOT8015 45V .1A PNP BJT
товару немає в наявності
Мінімальне замовлення: 21 шт
В кошику
од. на суму грн.