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BC857CQA147

BC857CQA147 NXP USA Inc.

BC857XQA_SER.pdf
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: DFN1010D-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
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Технічний опис BC857CQA147 NXP USA Inc.

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Part Status: Active, Packaging: Bulk, Power - Max: 280 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: DFN1010D-3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad.