Технічний опис BC859B-AQ Diotec Semiconductor
Description: TRANS PNP 30V 0.1A SOT23-3, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 250 mW, Qualification: AEC-Q101.
Інші пропозиції BC859B-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BC859B-AQ | Виробник : DIOTEC SEMICONDUCTOR |
 BC859B-AQ-DIO PNP SMD transistors |
товару немає в наявності |
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BC859B-AQ | Виробник : Diotec Semiconductor |
Description: TRANS PNP 30V 0.1A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW Qualification: AEC-Q101 |
товару немає в наявності |
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BC859B-AQ | Виробник : Diotec Semiconductor |
Bipolar Transistors - BJT BJT, SOT-23, 30V, 100mA, PNP, AEC-Q101 |
товару немає в наявності |