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Технічний опис BCP5310MTWG onsemi
Description: TRANS PNP 80V 1A 3WDFNW, Packaging: Bulk, Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: 3-WDFNW (2x2), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 875 mW.
Інші пропозиції BCP5310MTWG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BCP5310MTWG | onsemi |
 Description: TRANS PNP 80V 1A 3WDFNWPackaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW |
товару немає в наявності |
В кошику од. на суму грн. |
| BCP5310MTWG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: WDFN3 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
BCP5310MTWG | ON Semiconductor |
Trans GP BJT PNP 80V 1A 1500mW 3-Pin WDFNW EP T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| BCP5310MTWG |
|
Виробник: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
товару немає в наявності
В кошику
од. на суму грн.
| BCP5310MTWG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| BCP5310MTWG |
|
Виробник: ON Semiconductor
Trans GP BJT PNP 80V 1A 1500mW 3-Pin WDFNW EP T/R
Trans GP BJT PNP 80V 1A 1500mW 3-Pin WDFNW EP T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.