BCP5416E6327HTSA1 Infineon Technologies
Виробник: Infineon Technologies
Trans GP BJT NPN 45V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
| Кількість | Ціна |
|---|---|
| 2133+ | 16.59 грн |
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Технічний опис BCP5416E6327HTSA1 Infineon Technologies
Description: POWER BIPOLAR TRANSISTOR, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: PG-SOT223-4, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.
Інші пропозиції BCP5416E6327HTSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BCP5416E6327HTSA1 | Виробник : Infineon Technologies |
Description: POWER BIPOLAR TRANSISTOR Qualification: AEC-Q101 Grade: Automotive Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: PG-SOT223-4 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
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