BCP5616MTWG onsemi
Виробник: onsemi
Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
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Технічний опис BCP5616MTWG onsemi
Description: TRANS NPN 80V 1A 3WDFNW, Packaging: Tape & Reel (TR), Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 140MHz, Supplier Device Package: 3-WDFNW (2x2), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.5 W.
Інші пропозиції BCP5616MTWG за ціною від 10.21 грн до 67.18 грн
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BCP5616MTWG | onsemi |
Description: TRANS NPN 80V 1A 3WDFNW Packaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 140MHz Supplier Device Package: 3-WDFNW (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BCP5616MTWG | onsemi |
Bipolar Transistors - BJT 80V 1A NPN WDFNW3 2X2 |
на замовлення 8994 шт: термін постачання 238-247 дні (днів) |
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| BCP5616MTWG |
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Виробник: onsemi
Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 26.17 грн |
| 18+ | 17.10 грн |
| 25+ | 15.21 грн |
| 100+ | 12.33 грн |
| 250+ | 11.40 грн |
| 500+ | 10.84 грн |
| 1000+ | 10.21 грн |
| BCP5616MTWG |
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Виробник: onsemi
Bipolar Transistors - BJT 80V 1A NPN WDFNW3 2X2
Bipolar Transistors - BJT 80V 1A NPN WDFNW3 2X2
на замовлення 8994 шт:
термін постачання 238-247 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 67.18 грн |
| 10+ | 47.34 грн |
| 100+ | 25.66 грн |
| 500+ | 17.69 грн |