BCR 108 B6327 Infineon Technologies
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 170 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис BCR 108 B6327 Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 170 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: PG-SOT23, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BCR 108 B6327
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| BCR 108 B6327 | Infineon Technologies |
Digital Transistors Discrete Semiconductor Products Transistors (BJT) - Single, Pre-Biased |
товару немає в наявності |
В кошику од. на суму грн. |
| BCR 108 B6327 |
|
Виробник: Infineon Technologies
Digital Transistors Discrete Semiconductor Products Transistors (BJT) - Single, Pre-Biased
Digital Transistors Discrete Semiconductor Products Transistors (BJT) - Single, Pre-Biased
товару немає в наявності
В кошику
од. на суму грн.