Технічний опис BCR141SE6327 Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Frequency - Transition: 130MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: PG-SOT363-6-1, Part Status: Active.
Інші пропозиції BCR141SE6327
| Фото | Назва | Виробник | Інформація |
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BCR141SE6327 | Виробник : Infineon Technologies |
 Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active |
товару немає в наявності |
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| BCR 141S E6327 | Виробник : Infineon Technologies |
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR |
товару немає в наявності |