Технічний опис BCR116SE6327 INFINEON
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk, Part Status: Active, Supplier Device Package: PG-SOT363-6-1, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 4.7kOhms.
Інші пропозиції BCR116SE6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BCR116SE6327 | Виробник : Infineon Technologies |
 Description: SMALL SIGNAL BIPOLAR TRANSISTORFrequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk Part Status: Active Supplier Device Package: PG-SOT363-6-1 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms |
товару немає в наявності |