Технічний опис BCR169S INFINE
Description: BIPOLAR DIGITAL TRANSISTOR, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk, Part Status: Active, Supplier Device Package: PG-SOT363-6-1, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW.
Інші пропозиції BCR169S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BCR169S | Виробник : Infineon Technologies |
 Description: BIPOLAR DIGITAL TRANSISTORTransistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk Part Status: Active Supplier Device Package: PG-SOT363-6-1 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW |
товару немає в наявності |