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BCR196WH6327XTSA1

BCR196WH6327XTSA1 Infineon Technologies

bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Resistors Included: R1 and R2
Supplier Device Package: PG-SOT323
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
на замовлення 489000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4486+4.70 грн
Мінімальне замовлення: 4486 шт
В кошику  од. на суму  грн.
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Технічний опис BCR196WH6327XTSA1 Infineon Technologies

Description: TRANS PREBIAS PNP 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Supplier Device Package: PG-SOT323, Current - Collector (Ic) (Max): 70 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Resistors Included: R1 and R2.

Інші пропозиції BCR196WH6327XTSA1

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
BCR196WH6327XTSA1 BCR196WH6327XTSA1 Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
BCR196WH6327XTSA1 Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS
товару немає в наявності
В кошику  од. на суму  грн.
BCR196WH6327XTSA1 bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
BCR196WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
BCR196WH6327XTSA1 bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
Виробник: Infineon Technologies
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS
товару немає в наявності
В кошику  од. на суму  грн.